Low-temperature synthesis of colloidal nanocrystals

ABSTRACT

Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/142,182 filed 21 Dec. 2011, which has been allowed but is not yetgranted. U.S. patent application Ser. No. 13/142,182 is a 371 USNationalization of and claims the benefit of and priority to PatentCooperation Treaty Application No. PCT/US2010/021226, filed 15 Jan.2010, which claims priority to U.S. Prov. App. Ser. No. 61/145,477 filed16 Jan. 2009. The entireties of the foregoing applications areincorporated herein by reference.

GOVERNMENT LICENSE RIGHTS

This invention was made with government support under grant numberECS0609244 awarded by National Science Foundation. The government hascertain rights in the invention.

BACKGROUND

1. The Field of the Invention

The present invention relates to nanocrystals and methods for theirsynthesis. In particular, the present invention relates to methods forlow-temperature synthesis of colloidal nanocrystals having a narrow sizedistribution.

2. The Relevant Technology

Nanocrystals are small crystallites of semiconductors or metals withvarious shapes (dots, rods, fibers, tetrapods and other geometries) andsizes ranging from 1 to 100 nm. For example, a so-called quantum dot isa semiconductor whose excitons are confined in all three spatialdimensions. The most striking feature of semiconductor and metalnanocrystals is that in contrast to bulk material, their electronic andoptical properties are dependent on particle size and shape andtherefore can be continuously controlled over a large range.

These unique features make nanocrystals important candidates foradvanced applications in areas as diverse as nano-electronics,nano-photonics, solid-state lightning, energy conversion and storage,and health science. For example, nanocrystals are considered keycomponents for next-generation single-photon generation and detection,encryption, micro-lasing and solar energy conversion. In addition,nanocrystals are intensively studied in biological labeling and imagingas well as for targeted drug delivery. For example, nanocrystals areconsidered to be superior for use as dyes in biological labeling andimaging when compared to conventional molecular dyes because nanocrystaldyes are brighter and they are not generally subject to photo-bleaching.

This wide range of potential applications has sparked research into thedevelopment of robust and universal synthesis routes for the fabricationof nanocrystals with adjustable sizes and shapes. Outstanding in theseefforts is the work of Murray, Norris and Bawendi in 1993, who reporteda relatively simple and robust solution-based synthesis route for thepreparation of nearly monodisperse semiconducting cadmium chalcogenide(CdS, CdSe and CdTe) semiconductor nanocrystal quantum dots. Theirtechnique uses colloidal crystal-nucleation and growth chemistry at atemperature in range of about 200° C. to about 350° C. in the presenceof a long alkyl-chain surfactant/solvent system. Example solventsinclude long-chain alkylphosphines, long-chain alkylphosphine oxides,and long-chain alkenes. The solvent/surfactant system used inhigh-temperature synthesis methods is generally quite expensive and thesolvent/surfactant system is generally not reusable from reaction toreaction.

Following the Bawendi Group's discovery, widespread research has beendevoted to the synthesis of various types of nanocrystalline materials.While slight modifications of the original Bawendi method in terms oforganometallic precursor species and reaction and crystallizationsconditions (concentration of reaction components, solvents, growth time,etc.) have resulted in the development of a wealth of nanocrystals withdifferent compositions, sizes, and shapes, it is interesting to notethat the typical synthesis conditions are all based on the originalhigh-temperature (e.g., 200-350° C. for cadmium chalcogenidenanocrystals) crystallite nucleation and growth route.

SUMMARY

The present disclosure describes low-temperature organometallicnucleation and crystallization-based synthesis methods for thefabrication of high-quality semiconductor and metal colloidalnanocrystals (small crystallites of semiconductors or metals composed ofa few to several thousands of atoms) with narrow size distributions andtunable, size- and shape-dependent electronic and optical properties.The methods described herein enable synthesis of colloidal nanocrystalsat low temperatures (e.g., about 15° C. to about 130° C.). Nanocrystalsare widely considered as the cornerstones of emerging energy,information, and biological technologies due to their unique size- andshape-related tunable electronic and optical properties. Low-temperaturesynthesis methods provide higher product quality and they can bescaled-up for high-throughput fabrication with reduced engineeringrequirements/restrictions. Furthermore, synthesis at low temperaturesallows the use (and re-use) of conventional solvents, co-solvents,reaction vessels, and other components.

In one embodiment, the present invention includes a method forsynthesizing nanocrystals. The method includes (1) forming a reactionmixture in a reaction vessel while stirring under an inert-gasatmosphere at a temperature in a range from about 15° C. to about 130°C. and (2) growing nanocrystals in the reaction mixture for a period oftime between about 1 minute and about 96 hours while maintaining thetemperature, the stirring, and the inert-gas atmosphere. In oneembodiment, the reaction mixture includes at least one solvent, acationic precursor, an anionic precursor, and at least a first surfacestabilizing ligand.

In a second embodiment, another method for synthesis of nanocrystals isdisclosed. The method includes a first step of forming a reactionmixture under an inert atmosphere. The reaction mixture includes atleast one solvent selected from the group consisting of an alkane, analkene, a phenyl ether, a chloro alkane, a fluoro alkane, toluene, orsqualene, and combinations thereof, a cationic precursor including atleast one organometallic compound of cadmium, lead, zinc, mercury, gold,silver, cobalt, platinum, nickel, iron, or copper, an anionic precursorincluding at least one sulfide, selenide, telluride, oxide, phosphide,nitride, or arsenide, and at least a first surface stabilizing ligandhaving an aliphatic chain that includes at least four carbon atomsselected from the group consisting of an alkyl carboxylic acid, an alkylamine, an alkyl phosphine, an alkyl phosphonic acid, an alkyl sulfide,and combinations thereof.

The method further includes stirring the reaction mixture under aninert-gas atmosphere at a temperature in a range from about 15° C. toabout 130° C., growing nanocrystals in the reaction mixture whilemaintaining the temperature, the stirring, and the inert-gas atmosphere,and purifying the nanocrystals from the reaction mixture.

In a third embodiment, yet another method for colloidal synthesis ofnanocrystals is disclosed. The method includes (1) providing a cationicprecursor mixture, (2) providing an anionic precursor mixture, (3)providing a reaction solution, (4) heating each of the cationicprecursor mixture, the anionic precursor mixture, and the reactionsolution to a temperature in a range from about 50° C. to about 130° C.while stirring under an inert-gas atmosphere, (5) injecting a quantityof the cationic precursor mixture and a quantity of the anionicprecursor mixture into the reaction solution while maintaining thetemperature, the stirring, and the inert-gas atmosphere, so as to form areaction mixture, and (6) reacting the cationic precursor mixture andthe anionic precursor mixture in the reaction mixture while maintainingthe temperature, the stirring, and the inert-gas atmosphere for a periodof time between about 1 minute and about 96 hours so as to form thenanocrystals.

In one aspect, the cationic precursor mixture may include at least onecationic precursor material, at least a first surface stabilizingligand, and at least one solvent.

In another aspect, the anionic precursor mixture may include at leastone anionic precursor material, at least one anionic precursor ligand,and at least one solvent.

In yet another aspect, the reaction solution may include at least asecond surface stabilizing ligand and at least one solvent, wherein thesecond surface stabilizing ligand may be the same or different than thefirst surface stabilizing ligand included in the cationic precursormixture.

These and other objects and features of the present invention willbecome more fully apparent from the following description and appendedclaims, or may be learned by the practice of the invention as set forthhereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

To further clarify the above and other advantages and features of thepresent invention, a more particular description of the invention willbe rendered by reference to specific embodiments thereof which areillustrated in the appended drawings. It is appreciated that thesedrawings depict only illustrated embodiments of the invention and aretherefore not to be considered limiting of its scope. The invention willbe described and explained with additional specificity and detailthrough the use of the accompanying drawings in which:

FIG. 1 illustrates UV-vis absorption spectra of CdSe nanocrystals atvarious stages of a low-temperature growth process at 100° C.;

FIG. 2 illustrates a transmission electron microscopy image of CdSenanocrystals synthesized at 100° C., showing well-defined shapes andlattice fringes;

FIG. 3A illustrates a series of UV-vis absorption spectra of CdSenanocrystals with different sizes synthesized at 100° C., showingdifferent light absorption properties of nanocrystals as a function ofnanocrystal size; and

FIG. 3B illustrates a series of photoluminescence emission spectra ofCdSe nanocrystals with different sizes synthesized at 100° C., showingdifferent photoemission properties of nanocrystals as a function ofnanocrystal size.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 1. Introduction

The present disclosure describes low-temperature organometallicnucleation and crystallization-based synthesis methods for thefabrication of high-quality semiconductor and metal colloidalnanocrystals with narrow size distribution and tunable, size- andshape-dependent electronic and optical properties. The methods describedherein enable synthesis of colloidal nanocrystals at low temperatures(e.g., about 15° C. to about 130° C.). The methods described herein arebased at least in part on manipulation of the concentration ratio ofsurface stabilizing ligand (i.e., surfactant) to reaction precursorspecies, overall reaction species concentrations, and reactiontemperature in order to achieve kinetic and/or thermodynamic controlover the reaction. Under these conditions nucleation of nanocrystals iskinetically induced at much lower temperatures compared to conventionalmethods via selection of surface stabilizing ligand concentration, andlow-temperature growth of these nanocrystals is thermodynamically aswell as kinetically driven via selection of reaction speciesconcentration.

The temperature during the growth process is one important factor indetermining conditions for the nanocrystal growth. The reactiontemperature should be high enough to allow for rearrangement andannealing of atoms during the synthesis process while being low enoughto promote crystal growth. Temperature also affects the kinetics of thereaction. The temperature used in the methods described herein can be ina range from about 15° C. to about 130° C. One will appreciate, however,that the nanocrystal formation process will proceed quite slowly attemperatures as low as 15° C. Although it may take several days to fordetectable nanocrystal growth to occur. Preferably, the reaction end ofthe reaction temperature range should be at least about 35° C., about45° C., or at least about 50° C. in order for the reaction to proceed atan appreciable rate.

Another important factor in nanocrystal growth is monomer concentration.Monomer concentration can affect the size, the shape, and the number ofcrystallites grown in a reaction mixture. For example, the growthprocess of nanocrystals can occur in two different regimes, “focusing”and “defocusing”. At high monomer concentrations, the critical size (thesize where nanocrystals neither grow nor shrink) is relatively small,resulting in growth of nearly all particles. In this regime, smallerparticles grow faster than large ones (since larger crystals need moreatoms to grow than small crystals) resulting in “focusing” of the sizedistribution to yield nearly monodisperse particles. The size focusingis optimal when the monomer concentration is kept such that the averagenanocrystal size present is always slightly larger than the criticalsize. When the monomer concentration is depleted during growth, thecritical size becomes larger than the average size present, and thedistribution “defocuses” as a result of Ostwald ripening.

Another important factor in nanocrystal growth is the concentrationand/or composition of surface stabilizing ligands. Surface stabilizingligands play two possible roles in the nanocrystal growth process. Inone role, the surface stabilizing ligands bind to ionic precursormaterials in solution, thus stabilizing the solution state of the ions,thus disfavoring crystal growth. In another role, the surfacestabilizing ligands bind to the surface of the growing nanocrystals,thus stabilizing the nanocrystals and affecting their growth rate byreducing the effective surface area of the crystals. In addition,because different faces of the nanocrystals have different surfaceenergies and therefore different bonding energies vis-à-vis the surfacestabilizing ligands, surface stabilizing ligand concentration can beused to favor certain nanocrystal shapes (e.g., spheroids vs. rods vs.tetrapods). For example, rod formation can be favored in the c directionif faces defined by the a and b coordinate axes are saturated withligand while faces defined by the c coordinate axis are open.

In one example, in order to fabricate semiconducting cadmium selenidecolloidal nanocrystals via this low-temperature synthesis route, cadmiumprecursor and selenium precursor are injected into a solvent in thepresence of surface stabilizing ligands at temperatures of about 50° C.to about 130° C. under vigorous stirring of the reaction mixture andunder an inert gas atmosphere.

A few minutes after the injection of the precursor solutions into thereaction mixture, the formation of cadmium selenide colloidal crystalnuclei and growth into crystallites is indicated by a slight yellowishcoloration of the initially colorless reaction mixture. Growth of themicrocrystals can also be monitored spectroscopically. For example, FIG.1 illustrates a series of UV-vis absorption traces 100 as CdSenanocrystals grow over time. FIG. 1 illustrates the UV-vis absorption ofsamples taken after 5 minutes 102, 60 minutes 104, 21 hours 106, 96hours 108, and 141 hours 110 of CdSe nanocrystal growth at 100° C.

The formation of cadmium selenide colloidal crystal nuclei and growthinto crystallites is indicated by the appearance of a distinct sharppeak 112 in the UV-vis absorption spectrum of traces 104 and 106.Subsequently, steady growth of the formed crystallites andtransformation of the initial clusters into larger crystallites isevidenced by the appearance of a second absorption peak 114 at higherwavelength and reduction of the initial absorption peak 112.

The transformation of these initial cadmium selenide small crystalliteswith defined cluster sizes into larger nanocrystals is indicated by theadvent of a shoulder peak 116 in the UV-vis absorption spectrum of thecrystallites and a steady red-shifting towards longer wavelengths withtime, which can be seen in traces 108 and 110. The red-shift is thedirect result of the creation of strongly confined excitons innanocrystals with increasing size upon light illumination.

The formation and subsequent growth of cadmium selenide nanocrystals bythe low-temperature synthesis method disclosed herein is also evidencedby transmission electron microscopy studies. Referring now to FIG. 2, arepresentative transmission electron micrograph shows the presence ofCdSe crystalline nanoparticles grown at 100° C. with monodisperse sizedistribution, well-defined faces, and well-defined crystalline latticelines at a given reaction time.

Due to the lower temperature compared to traditional high-temperaturesynthesis routes, the nanocrystal growth rate in the methods disclosedherein is slowed. This enables facile control of the size of the finalnanocrystals. FIG. 3A illustrates a series of UV-vis absorption spectraof CdSe nanocrystals with different sizes synthesized at 100° C.,showing different light absorption properties of nanocrystals as afunction of nanocrystal size. When the nanocrystals have reached thedesired size, as monitored spectroscopically or as a function ofreaction time, the growth reaction can be stopped by simply cooling thereaction mixture to room temperature. The synthesized nanocrystals areseparated from the growth solution by extraction, precipitation,centrifugation and re-dissolution in fresh solvent.

An important measure of the crystalline and surface quality of colloidalnanocrystals is their luminescence upon irradiation with light(photoluminescence). The wavelength of light emitted by a nanocrystal(i.e., excited light emission or photoluminescence) is a function of thenanocrystal's size—as size increases, there is a steady shift to longeremitted wavelengths (i.e., a red-shift). A population of high-quality,monodisperse colloidal nanocrystals will display a sharp emission peak,whereas polydisperse colloidal nanocrystals will display a broadenedemission spectrum.

FIG. 3B illustrates photoluminescence spectra of cadmium selenidenanocrystals fabricated by the synthesis method described herein andexcited (illuminated) by UV-light of 365 nm. These studies not onlyevidence excellent photoluminescence intensities of the synthesizednanocrystals, but also reveal the desired sharp emission spectra and thequantum size effect displayed by the creation of differentphotoluminescence emission colors as a function of nanocrystal size(from blue to red as the diameter of the synthesized individualmonodisperse nanocrystal samples increases from about 1 nm to about 6nm).

2. Methods of Synthesis

The present disclosure relates to methods for the synthesis ofnanocrystals (i.e., nanoparticles). In particular, the presentdisclosure describes an organometallic nucleation and crystallizationbased synthesis route for the fabrication of high-quality colloidalnanocrystals having a narrow size distribution and tunable (i.e.,size-dependent) electronic and optical properties. The methods describedin this disclosure are based on a low-temperature nucleation and crystalgrowth route (e.g., about 15° C. to about 130° C.) in which anionic andcationic precursor materials are reacted to form nanocrystals in thepresence of an inert solvent and a surface stabilizing ligand. Reactionconditions (e.g., temperature, concentration of reactants, orconcentration of surface stabilizing ligands) can be tuned to controlthe size and shape of the nanocrystals that are synthesized.

In one embodiment, a method for colloidal synthesis of nanocrystalsincludes (1) forming a reaction mixture in a reaction vessel whilestirring under an inert-gas atmosphere at a temperature in a range fromabout 15° C. to about 130° C., and (2) growing nanocrystals in thereaction mixture for a period of time between about 1 minute and about96 hours while maintaining the temperature, the stirring, and theinert-gas atmosphere. In one embodiment, the reaction mixture used togrow the nanocrystals includes at least one inert solvent, a cationicprecursor, an anionic precursor, and at least a first surfacestabilizing ligand.

The reaction temperature used in the methods described herein can be ina range from about 15° C. to about 130° C., about 35° C. to about 130°C., about 50° C. to about 130° C., or an temperature therebetween. Onewill appreciate, however, that the nanocrystal formation process willproceed quite slowly at temperatures as low as 15° C. For example, at15° C., it may take several days to for detectable nanocrystal growth tooccur. Preferably, the reaction end of the reaction temperature rangeshould be at least about 35° C., about 45° C., or at least about 50° C.in order for the reaction to proceed at an appreciable rate.

Suitable examples of solvents include, but are not limited to alkanes,alkenes, phenyl ethers, chloro alkanes, fluoro alkanes, toluene, orsqualene. In a preferred embodiment, the inert solvent is octadecene.Preferably the solvent is an inert solvent.

Choice of solvent can also affect the choice of reaction temperature. Inone embodiment, for example, the selected solvent may have a boilingpoint in a range from about 80 ° C. to about 350° C. Preferably, thesolvent has a boiling point in a range from about 100° C. to about 300°C. More preferably, the solvent has a boiling point in a range fromabout 110° C. to about 280° C. If, for example, solvents were chosenhaving boiling points on the low end of these recited ranges, then itmay not be possible to run the reaction at a temperature higher than 80°C., 100° C., or 110° C. In the alternative, it may be possible toconduct the synthesis reaction in boiling solvent by including a refluxhead or another means on the reaction vessel to prevent evaporation ofthe solvent.

Examples of suitable surface stabilizing ligands that can be included inthe reaction mixture include alkyl carboxylic acids, alkyl amines, alkylphosphines, alkyl phosphonic acids, or alkyl sulfides, and combinationsthereof. Preferably, the surface stabilizing ligand has an aliphaticchain that includes at least four carbon atoms.

In one embodiment, the cationic precursor includes at least one cationicprecursor material, at least a second surface stabilizing ligand thatmay be the same as or different than the first surface stabilizingligand, and at least one inert solvent.

Examples of suitable cationic precursor materials include organometalliccompounds of cadmium, lead, zinc, mercury, gold, silver, cobalt,platinum, nickel, iron, or copper. In one embodiment, the organometalliccompound includes metallic C₂-C₂₀ carboxylic acid salts, and derivativesthereof.

In one embodiment, the anionic precursor includes at least one anionicprecursor material, at least one anionic precursor ligand, and at leastone inert solvent.

In one embodiment, the anionic precursor material can include at leastone sulfide, selenide, telluride, oxide, phosphide, nitride, orarsenide. One will of course appreciate that terms such as sulfide orselenide refer to oxidation states of sulfur and selenium and that, assuch, the sulfide or selenide species include a counter-ion or a ligand.According to the present disclosure, the anionic precursor material canbe added to the reaction mixture already bound to its ligand, or thesulfide, selenide, telluride, oxide, phosphide, nitride, or arsenidespecies can be formed in situ by reacting with an anionic precursorligand.

Accordingly, suitable examples of anionic precursor ligands includetrialkylphosphines. In one embodiment, the trialkylphosphine can beselected from the group consisting of trimethylphosphine,triethylphosphine, tributylyphosphine, tripropylphosphine,tripentylphosphine, trihexylphosphine, triheptylphosphine,trioctylphosphine, triphenyl phosphine, tris(p-anisyl)phosphine,tri-n-butylphosphine, tris(p-tolyl)phosphine, tri-n-propylphosphine,tricyclohexyl phosphine, tris(hydroxymethyl)phosphine,tris(2-cyanoethyl)phosphine, tri-isobutylphosphine,tris(3-hydroxypropyl)phosphine, di-tert-butylmethylphosphine,tris(o-tolyl)phosphine, tris(m-tolyl)phosphine, tricyclopentylphosphine,tert-butyldimethylphosphine, n-butyldicyclohexylphosphine, or(2-biphenylyl)di-tert-butylphosphine, and combinations thereof. In apreferred embodiment, the trialkylphosphine is trioctylphosphine.

Suitable examples of inert gases that can be used to provide an inertgas atmosphere (i.e., a non-reactive, moisture-free atmosphere) include,but are not limited to, argon, nitrogen, helium, and the like.

In one embodiment, the method disclosed herein further includesmonitoring the growing of the nanocrystals using UV-vis absorptionspectroscopy, photoluminescence emission spectroscopy, and/ortransmission electron microscopy. UV-vis absorption spectroscopy,photoluminescence emission spectroscopy, and/or transmission electronmicroscopy can be used to monitor the size, shape, and monodispersity ofthe nanocrystals as they grow. For example, the photoluminescenceemission spectroscopy can be used to monitor the size of the growingnanocrystals because the emission spectrum red-shifts over time as thecrystals become larger. Photoluminescence emission spectroscopy can alsobe used routinely to monitor the degree of monodispersity of the growingnanocrystals owing to the fact that a population of nanocrystals havinga discrete size will exhibit a sharp emission peak, whereas polydispersenanocrystals will show a broadened emission spectrum.

Crystalline clusters of two or more molecules (e.g., crystallites of twoor more CdSe molecules) can have interesting and useful electronic andoptical properties. Thus the lower size range of crystallinenanoparticles that can be grown using the methods disclosed herein islimited only by the size of the molecules. For example, a crystallinecluster few CdSe molecules may have a size on the order of a few tenthsof a nanometer. The upper size of nanocrystalline particles that can begrown using the methods described herein is about 100 nm. Preferably,the nanoparticles grown using the methods described herein have a sizeof less than about 100 nm in one or more dimensions (e.g., along the a,b, and c coordinates axes), less than about 80 nm one or moredimensions, less than about 50 nm one or more dimensions, less thanabout 40 nm one or more dimensions, less than about 30 nm one or moredimensions, less than about 20 nm one or more dimensions, less thanabout 15 nm one or more dimensions, less than about 10 nm one or moredimensions, less than about 5 nm one or more dimensions. Preferably, thenanocrystals synthesized according the methods described herein have asize less than about 30-40 nm.

When the nanocrystals reach their desired size (as determined byreaction time or one or more monitoring techniques), the growth of thenanocrystals can be slowed significantly or stopped by cooling thereaction mixture to ambient temperature.

Once the reaction has been slowed or stopped by cooling, thenanocrystals can be purified from the reaction mixture. An exemplarypurification method includes (1) extracting the nanocrystals from thereaction mixture using at least one solvent that is immiscible in thereaction mixture, (2) precipitating the nanocrystals out of theextraction solvent and separating the precipitated nanocrystals from theextraction solvent by centrifugation, (3) suspending the nanocrystals ina fresh solvent. Appropriate fresh solvents include, but are not limitedto, hexanes, toluene, and/or chloroform. The purified and resuspendednanocrystals can be characterized and/or used in a variety of experimentor techniques.

In one embodiment, another method for synthesis of nanocrystals isdisclosed. The method includes a first step of forming a reactionmixture under an inert atmosphere. The reaction mixture includes atleast one solvent selected from the group consisting of an alkane, analkene, a phenyl ether, a chloro alkane, a fluoro alkane, toluene, orsqualene, and combinations thereof, a cationic precursor including atleast one organometallic compound of cadmium, lead, zinc, mercury, gold,silver, cobalt, platinum, nickel, iron, or copper, an anionic precursorincluding at least one sulfide, selenide, telluride, oxide, phosphide,nitride, or arsenide, and at least a first surface stabilizing ligandhaving an aliphatic chain that includes at least four carbon atomsselected from the group consisting of an alkyl carboxylic acid, an alkylamine, an alkyl phosphine, an alkyl phosphonic acid, an alkyl sulfide,and combinations thereof.

The method further includes stirring the reaction mixture under aninert-gas atmosphere at a temperature in a range from about 15° C. toabout 130° C., growing nanocrystals in the reaction mixture whilemaintaining the temperature, the stirring, and the inert-gas atmosphere,and purifying the nanocrystals from the reaction mixture.

In one embodiment, the present invention includes a method for colloidalsynthesis of nanocrystals including (1) providing a cationic precursormixture that includes at least one cationic precursor material, at leasta first surface stabilizing ligand, at least one inert solvent; (2)providing an anionic precursor mixture that includes at least oneanionic precursor material, at least one anionic precursor ligand, andat least one inert solvent; (3) providing a reaction solution thatincludes at least a second surface stabilizing ligand that may be thesame or different than the first surface stabilizing ligand, and atleast one inert solvent; (4) heating each of the cationic precursormixture, the anionic precursor mixture, and the reaction solution to atemperature in a range from about 50° C. to about 130° C. while stirringunder an inert-gas atmosphere; (5) injecting a quantity of the cationicprecursor mixture and a quantity of the anionic precursor mixture intothe reaction solution while maintaining the temperature, the stirring,and the inert-gas atmosphere, so as to form a reaction mixture; and (6)reacting the cationic precursor mixture and the anionic precursormixture in the reaction mixture while maintaining the temperature, thestirring, and the inert-gas atmosphere for a period of time betweenabout 1 minute and about 96 hours so as to form the nanocrystals.

As discussed in the introduction, the concentration of precursormaterials and the concentration of surface stabilizing ligands areimportant factors in determining the rate of nanocrystal growth, thesize and shape of the nanocrystals, and their degree of monodispersity.

As such, in one embodiment the quantity of anionic and cationicprecursor materials added to the reaction solution to form the reactionmixture can include a molar excess of both the anionic and cationicprecursor materials relative to the numbers of nanocrystals formed. Inanother embodiment, the quantity of anionic and cationic precursormaterials can be limiting. In a related embodiment, the molar ratio ofthe anionic and cationic precursor materials added to form the reactionmixture can range from about 100:1 to about 1:100, with the preferredmolar ratio being about 5:1 to about 1:5, with the more preferred ratiobeing about 1:1.

Similarly, in one embodiment the surface stabilizing ligands can beadded in molar excess or their concentration can be limiting. In oneembodiment, the molar ratio of the nanocrystals to the surfacestabilizing ligand can range from about 1:1 to about 1:1.105.

3. EXAMPLES

Methods described herein can be used to for the synthesis ofsubstantially monodisperse colloidal nanocrystals via an organometallicnucleation and crystallization route at low temperature (50-130° C.).The synthesis typically starts with preparing cationic and anionicmolecular precursor solutions. These solutions are then injected into areaction flask containing surface-stabilizing ligands and an inertsolvent at temperatures ranging from 50 to 130° C. under an inert-gasatmosphere (air and moisture-free conditions). The reaction mixture isstirred at a given temperature for several seconds to several days,depending on the desired end-size of the nanocrystals and the chosenreaction temperature.

When the desired size of the nanocrystals is reached, as monitored, forexample, by time, spectroscopic properties, or size observed in atransmission electron microscope, the reaction is stopped by cooling thereaction mixture to room temperature and separating the synthesizednanocrystals from the growth mixture (solvent, unreacted ligands andprecursors). An exemplary purification method includes (1) extractingthe nanocrystals from the reaction mixture using at least one solventthat is immiscible in the reaction mixture, (2) precipitating thenanocrystals out of the extraction solvent and separating theprecipitated nanocrystals from the extraction solvent by centrifugation,(3) suspending the nanocrystals in a fresh solvent. Appropriate freshsolvents include, but are not limited to, hexanes, toluene, and/orchloroform. Purified and re-dissolved nanocrystals are used forstructural (transmission electron microscopy) and optical (UV-visabsorption and photoluminescence spectroscopy) characterization studies.

Example 1 Low-Temperature Synthesis of Cadmium Selenide Nanocrystals

Cationic precursor solution (solution A): Cadmium acetate (0.1276 g),oleic acid (1.2 mL), and octadecene (11 mL) are filled into a roundflask. This mixture is heated to a temperature of 130° C. with stirringunder argon gas atmosphere. The heating temperature is maintained at130° C. until the cadmium acetate is fully dissolved.

Anionic precursor solution (solution B): Metallic selenium (0.315 g),trioctylphoshine (17 mL) and 1.8 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctadecylamine (0.5 g) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time. For example, at thisreaction condition and using 5 mL of solutions A and B for injections,the synthesis time for nanocrystals with a diameter of 3.2 nm is 120minutes.

The CdSe nanocrystal synthesis is stopped by cooling the reactionmixture to room temperature. The CdSe nanocrystals are separated fromthe reaction mixture by first adding 10 mL of hexanes and 20 mL methanolto the reaction mixture. This results in the formation of two liquidlayers with the nanocrystals dissolved in the upper (hexanes) layerwhich are extracted. This is followed by the addition of 15 mL acetoneto the extracted nanocrystal solution. Under this condition, thenanocrystals precipitate out of the growth solution and can be separatedfrom it by centrifugation. The separated and purified nanocrystals arethen re-dissolved in appropriate amounts of solvent (such as hexane,toluene, or chloroform) and characterized.

Example 2 Low-Temperature Synthesis of Cadmium Selenide Nanocrystals

Cationic precursor solution (solution A): Cadmium oxide (0.0615 g),oleic acid (1.2 mL), and octadecene (11 mL) are filled into a roundflask. This mixture is heated to a temperature of 200° C. with stirringunder argon gas atmosphere. The heating temperature is maintained at200° C. until the cadmium oxide is fully dissolved. When the solutionhas turned colorless, it is cooled down to the desired injectiontemperature, for example 130° C.

Anionic precursor solution (solution B): Metallic selenium (0.315 g),trioctylphoshine (17 mL) and 1.8 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctadecylamine (0.5 g) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time until the nanocrystalhave a desired sized and/or properties. The CdSe nanocrystal synthesisis stopped by cooling the reaction mixture to room temperature. The CdSenanocrystals are separated from the reaction mixture using the proceduredescribed herein.

Example 3 Low-Temperature Synthesis of Cadmium Selenide Nanocrystals

Cationic precursor solution (solution A): Cadmium acetate dihydrate(0.1276 g), octanoic acid (0.6 mL), and octadecene (11 mL) are filledinto a round flask. This mixture is heated to a temperature of 130° C.with stirring under argon gas atmosphere. The heating temperature ismaintained at 130° C. until the cadmium acetate is fully dissolved.

Anionic precursor solution (solution B): Metallic selenium (0.315 g),trioctylphoshine (17 mL) and 1.8 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctadecylamine (0.5 g) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time until the nanocrystalhave a desired sized and/or properties. The CdSe nanocrystal synthesisis stopped by cooling the reaction mixture to room temperature. The CdSenanocrystals are separated from the reaction mixture using the proceduredescribed herein.

Example 4 Low-Temperature Synthesis of Cadmium Selenide Nanocrystals

Cationic precursor solution (solution A): Cadmium acetate dihydrate(0.1276 g), oleic acid (1.2 mL), and octadecene (11 mL) are filled intoa round flask. This mixture is heated to a temperature of 130° C. withstirring under argon gas atmosphere. The heating temperature ismaintained at 130° C. until the cadmium acetate is fully dissolved.

Anionic precursor solution (solution B): Metallic selenium (0.2266 g),trioctylphoshine (2.4 mL) and 10.4 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctadecylamine (0.5 g) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time until the nanocrystalhave a desired sized and/or properties. The CdSe nanocrystal synthesisis stopped by cooling the reaction mixture to room temperature. The CdSenanocrystals are separated from the reaction mixture using the proceduredescribed herein.

Example 5 Low-Temperature Synthesis of Cadmium Selenide Nanocrystals

Cationic precursor solution (solution A): Cadmium acetate dihydrate(0.1276 g), oleic acid (1.2 mL), and octadecene (11 mL) are filled intoa round flask. This mixture is heated to a temperature of 130° C. withstirring under argon gas atmosphere. The heating temperature ismaintained at 130° C. until the cadmium acetate is fully dissolved.

Anionic precursor solution (solution B): Metallic selenium (0.315 g),trioctylphoshine (17 mL) and 1.8 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctylamine (0.31 mL) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time until the nanocrystalhave a desired sized and/or properties. The CdSe nanocrystal synthesisis stopped by cooling the reaction mixture to room temperature. The CdSenanocrystals are separated from the reaction mixture using the proceduredescribed herein.

Example 6 Low-Temperature Synthesis of Lead Selenide Nanocrystals

Cationic precursor solution (solution A): Lead(II)acetate trihydrate(0.36 g), oleic acid (2.4 mL), and diphenyl ether (11 mL) are filledinto a round flask. This mixture is heated to a temperature of 130° C.with stirring under argon gas atmosphere. The temperature is maintainedat 130° C. until the lead(II)acetate trihydrate is fully dissolved.

Anionic precursor solution (solution B): Metallic selenium (0.315 g),trioctylphoshine (17 mL) and 1.8 mL toluene are filled into a roundflask. This mixture is stirred at room temperature under argon gas untilthe selenium is fully dissolved.

Reaction solution (solution C): Chosen ligand and solvent, for exampleoctadecylamine (0.5 g) and octadecene (10 mL), are filled into a roundflask. Under argon gas atmosphere and stirring, this mixture is heatedto the desired injection temperature.

When solution C has reached the desired injection temperature, forexample 130° C., the same amount (0.5-10 mL) of solution A and solutionB are simultaneously injected into solution C with the reactiontemperature maintained at the injection temperature under argon gasatmosphere and constant stirring. The nanocrystals are then allowed toundergo nucleation and growth for a given time until the nanocrystalhave a desired sized and/or properties. The PbSe nanocrystal synthesisis stopped by cooling the reaction mixture to room temperature. The PbSenanocrystals are separated from the reaction mixture using the proceduredescribed herein.

Example 7 Low-Temperature Synthesis of Other Nanocrystals

The methods described herein can be used for low-temperature growth ofnanocrystals other than cadmium selenide and lead selenide, including,but not restricted to, cadmium chalcogenide, lead chalcogenide, zincchalcogenide, and mercury chalcogenide nanocrystals; other types ofnanocrystals such as oxides, phosphides, nitrides, and arsenides; metalssuch as gold, silver, cobalt, platinum, nickel, iron, and copper.

Other type of surface-stabilizing ligands can be used for the inventedlow-temperature growth process, including, but not restricted to, alkylcarboxylic acids, alkyl amines, alkyl phosphines, and alkyl sulfides.

The reaction solvent is not restricted. Other solvents can be used(depending on the chosen reaction temperature), including, but notrestricted to, alkanes, alkenes, phenyl ethers, toluene, squalane, andchloro and fluoro alkanes.

The present invention may be embodied in other specific forms withoutdeparting from its spirit or essential characteristics. The describedembodiments are to be considered in all respects only as illustrativeand not restrictive. The scope of the invention is, therefore, indicatedby the appended claims rather than by the foregoing description. Allchanges which come within the meaning and range of equivalency of theclaims are to be embraced within their scope.

What is claimed is:
 1. A chemical composition, comprising an amount ofsemiconductor nanocrystals, each semiconductor nanocrystal having a sizegreater than 1 nm and less than about 40 nm resulting inthree-dimensional quantum confinement of created excitons within thesemiconductor nanocrystal, the semiconductor nanocrystal including: aGroup III, Group IV, Group VIIIB, Group IB, or Group IIB cationic metal;a Group V or Group VI anion selected from the group consisting of asulfide, selenide, telluride, phosphide, nitride, arsenide, andcombinations thereof; and at least a residual amount of a synthesissolvent having a boiling point in a range from about 80° C. to about350° C.
 2. The chemical composition of claim 1, wherein the synthesissolvent has a boiling point in a range from about 100° C. to about 300°C.
 3. The chemical composition of claim 1, wherein the synthesis solventhas a boiling point in a range from about 110° C. to about 280° C. 4.The chemical composition of claim 1, wherein the synthesis solvent isselected from the group consisting of an alkane, an alkene, a phenylether, a chloro alkane, a fluoro alkane, toluene, and squalene.
 5. Thechemical composition of claim 4, wherein the synthesis solvent comprisesoctadecene.
 6. The chemical composition of claim 1, further comprising asurface stabilizing ligand.
 7. The chemical composition of claim 6,wherein the surface stabilizing ligand is an alkyl amine having analiphatic chain that includes at least four carbon atoms.
 8. Thechemical composition of claim 1, wherein the Group III, Group IV, GroupVIIIB, Group IB, or Group IIB cationic metal includes at least one ofiron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium,platinum, copper, silver, gold, zinc, cadmium, mercury, aluminum,gallium, indium, silicon, germanium, tin, or lead.
 9. The chemicalcomposition of claim 8, wherein the Group III, Group IV, Group VIIIB,Group IB, or Group IIB cationic metal includes at least one of cadmium,lead, zinc, mercury, gold, silver, cobalt, platinum, nickel, iron, orcopper.
 10. The chemical composition of claim 1, wherein semiconductornanocrystals are suspended in a material.
 11. The chemical compositionof claim 10, wherein the material is a storage solvent.
 12. A method forsynthesizing semiconductor nanocrystals, comprising: forming a firstsolution in a reaction vessel under an inert-gas atmosphere at atemperature of at least 35° C., the first solution comprising a cationicprecursor, an alkyl amine and at least one of an alkyl carboxylic acidor an alkyl phosphonic acid, and a solvent having a boiling point in arange from about 80° C. to about 350° C. selected from the groupconsisting of an alkane, an alkene, a phenyl ether, a chloro alkane, afluoro alkane, toluene, and squalene; forming a second solution in areaction vessel under an inert-gas atmosphere at ambient temperature,the second solution comprising an anionic precursor, an anionicprecursor ligand, and a solvent having a boiling point in a range fromabout 80° C. to about 350° C. selected from the group consisting of analkane, an alkene, a phenyl ether, a chloro alkane, a fluoro alkane,toluene, and squalene; combining the first and second solutions toinitiate growth of the semiconductor nanocrystals; and growingsemiconductor nanocrystals for a period of time between about 1 minuteand about 96 hours at a temperature in a range of about 35° C. to about130° C.
 13. The method of claim 12, wherein the alkyl amine has analiphatic chain that includes at least four carbon atoms.
 14. The methodof claim 12, wherein the alkyl amine comprises octadecylamine.
 15. Themethod of claim 12, wherein the cationic precursor comprises anorganometallic compound.
 16. The method of claim 15, wherein theorganometallic compound comprises a metallic C₂-C₂₀ carboxylic acidsalt.
 17. The method of claim 12, wherein the anionic precursor ligandis a phosphine.
 18. A method for synthesizing semiconductornanocrystals, comprising: forming a first solution under an inert-gasatmosphere at a temperature of at least 35° C., the first solutioncomprising a cationic precursor and one of an alkyl carboxylic acid oran alkyl phosphonic acid, and a solvent selected from the groupconsisting of an alkane, an alkene, a phenyl ether, a chloro alkane, afluoro alkane, toluene, and squalene; forming a second solution under aninert-gas atmosphere at ambient temperature, the second solutioncomprising a Group V or Group VI anionic precursor, a phosphine, and asolvent selected from the group consisting of an alkane, an alkene, aphenyl ether, a chloro alkane, a fluoro alkane, toluene, and squalene;forming a third solution under an inert-gas atmosphere at a temperatureof at least 35° C., the third solution comprising an alkyl amine havingan aliphatic chain that includes at least four carbon atoms and asolvent selected from the group consisting of an alkane, an alkene, aphenyl ether, a chloro alkane, a fluoro alkane, toluene, and squalene.combining at least a portion of the first and second solutions into thethird solution to initiate growth of the semiconductor nanocrystals; andgrowing semiconductor nanocrystals for a period of time between about 1minute and about 96 hours at a temperature in a range of about 35° C. toabout 130° C.
 19. The method of claim 18, wherein the organometallicprecursor comprises a Group III, Group IV, Group VIIIB, Group IB, orGroup IIB metal.
 20. The method of claim 19, wherein the Group III,Group IV, Group VIIIB, Group IB, or Group IIB cationic metal includes atleast one of iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel,palladium, platinum, copper, silver, gold, zinc, cadmium, mercury,aluminum, gallium, indium, silicon, germanium, tin, or lead.
 21. Themethod of claim 20, wherein the Group III, Group IV, Group VIIIB, GroupIB, or Group IIB cationic metal includes at least one of cadmium, lead,zinc, mercury, gold, silver, cobalt, platinum, nickel, iron, or copper22. The method of claim 18, wherein the Group V or Group VI anionicprecursor is at least one sulfide, selenide, telluride, phosphide,nitride, or arsenide.
 23. The method of claim 18, wherein the alkylamine comprises octadecylamine.
 24. The method of claim 18, wherein theorganometallic precursor comprises a metallic C₂-C₂₀ carboxylic acidsalt.
 25. The method of claim 18, further comprising one of: adding thefirst and second solutions into the third solution substantiallysimultaneously; adding the first solution into the third solution andthen adding the second solution into the third solution; or adding thesecond solution into the third solution and then adding the firstsolution into the third solution.
 26. A chemical composition comprisingan amount of semiconductor nanocrystals formed according to the methodof claim 18 and at least a residual amount of a synthesis solvent.